Prof. Jiangang Yu | Microelectronics | Best Innovator Award
Prof at North University of China.
Dr. Jiangang Yu is a materials physicist and semiconductor researcher specializing in wide bandgap semiconductor devices, including gallium oxide (Ga₂O₃), silicon carbide (SiC), and III-nitride-based optoelectronic materials. He received his Ph.D. in Microelectronics and Solid-State Electronics from Xidian University in 2020, where his work focused on advanced UV photodetectors and power semiconductor device structures. With a strong physics background and hands-on expertise in device fabrication, he has contributed to multiple national research projects supported by the NSFC and international collaborations. Dr. Yu is first author on several high-impact publications in journals like IEEE Transactions on Electron Devices and Journal of Alloys and Compounds. His innovations have resulted in six granted Chinese patents in UV photodetector technologies. Currently based in Xi’an, he brings deep technical knowledge in physical vapor deposition (PVD), pulsed laser deposition (PLD), and nanostructured multilayers, positioning him as a rising expert in next-generation optoelectronic and power devices.
Profile
🎓 Education
Jiangang Yu earned his Ph.D. in Microelectronics and Solid-State Electronics from Xidian University (2017–2020), working under the supervision of Prof. Renxu Jia. His doctoral research explored high-performance Ga₂O₃-based UV photodetectors and heterojunction power device structures. Prior to this, he completed his M.Sc. in Condensed Matter Physics at Tianjin Normal University (2014–2017), where he gained early research experience in nanolayer films and solid-state physics under Prof. Dejun Li. He holds a B.Sc. in Physics from Jinzhong University (2010–2014), where he built a strong foundation in mathematics, quantum mechanics, and semiconductor physics. This progressive academic path reflects his consistent focus on materials science and device engineering, bridging basic physics with applied microelectronics. Dr. Yu’s educational journey has equipped him with both theoretical understanding and advanced laboratory skills in thin-film deposition, ion beam modification, and optoelectronic device characterization, enabling his transition into cutting-edge semiconductor research and development.
💼Experience
Dr. Yu has participated in and led several major semiconductor research projects. As principal investigator, he led a Graduate Innovation Project focused on the interface characteristics of Ga₂O₃/SiC heterojunctions (2018–2019). He was a core contributor to three NSFC-funded projects involving Ga₂O₃-based power MOSFETs and heterojunction UV photodetectors (2015–2022). His work has advanced the understanding of epitaxial growth and device integration of wide bandgap semiconductors. He has also conducted detailed investigations into the mechanical behavior of nanostructured boride/nitride multilayers and biofunctional coatings with antibacterial properties. Dr. Yu is adept at using PVD, PLD, ALD, and PECVD techniques for thin-film fabrication and has expertise in semiconductor device processing and optical/electrical characterization. His scientific output includes six first-author publications and six granted patents. His research consistently bridges material science with applied electronics, reflecting a strong ability to conduct independent research while contributing to collaborative multidisciplinary teams across academia and industry.
🏆 Awards & Honors
Jiangang Yu has authored impactful research in the field of wide bandgap semiconductors, with first-author publications in top journals like IEEE Transactions on Electron Devices and Journal of Alloys and Compounds. His work has introduced several innovations in UV photodetector design, including Pt-enhanced β-Ga₂O₃ heterojunctions and self-powered Ga₂O₃/SiC devices. These contributions have resulted in six granted Chinese invention patents, focusing on dual-band UV photodetectors and MSM structures based on (AlₓGa₁₋ₓ)₂O₃ and (InₓGa₁₋ₓ)₂O₃. His patented technologies address key challenges in spectral selectivity, device sensitivity, and fabrication scalability. Dr. Yu’s expertise in optoelectronic materials and nanostructured films has also supported national-level research in multifunctional coatings. His recognition as a grant recipient and lead investigator in innovation-driven research at Xidian University highlights his potential as an emerging leader in China’s semiconductor materials research landscape. These achievements underscore his technical depth and commitment to advancing power and photonic device engineering.
🔬 Research Focus
Dr. Yu’s research focuses on the growth, characterization, and device integration of wide bandgap semiconductors, particularly gallium oxide (Ga₂O₃), SiC, and III-nitride materials. He is advancing high-performance UV photodetectors by exploring heterojunctions, surface plasmon-enhanced interfaces, and MSM architectures. His work combines materials synthesis with device-level engineering, enabling novel self-powered and enhancement-mode devices. He also investigates multilayer functional films (e.g., HfN/HfB₂, Ti-Ag-N) with tailored mechanical and antibacterial properties for biomedical and protective applications. Technically, he is proficient in a wide range of deposition and processing techniques including PVD, ALD, and PLD. His goal is to improve the efficiency, durability, and spectral range of optoelectronic devices while contributing to next-generation power electronics such as wide bandgap MOSFETs and IGBTs. Dr. Yu’s research has important implications for high-temperature electronics, ultraviolet imaging, and medical materials, and positions him at the intersection of nanotechnology, materials physics, and solid-state device innovation.
Conclusion
Dr. Jiangang Yu is an excellent candidate for the Best Innovator Award, with a strong foundation in advanced semiconductor research, a robust publication and patent record, and a demonstrated ability to innovate within the academic and technological landscape. His work on high-performance UV photodetectors and wide bandgap semiconductors is both scientifically significant and industrially relevant. With further emphasis on commercialization pathways and global innovation leadership, he has the potential to emerge as a leading figure in semiconductor innovation.
📝Publications
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Title: Surface modification of β-Ga₂O₃ layer using Pt nanoparticles for improved deep UV photodetector performance
Year: 2021
Authors: Yu, J. et al.
Journal: Journal of Alloys and Compounds
Volume: 875, Article: 159508
Link: https://doi.org/10.1016/j.jallcom.2021.159508
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Title: Improved Photo-Response Performance of Self-Powered β-Ga₂O₃/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles
Year: 2020
Authors: Yu, J. et al.
Journal: IEEE Transactions on Electron Devices
Volume/Issue: 67(8), Pages: 3199–3204
Link: https://doi.org/10.1109/TED.2020.2999183 -
Title: Influence of annealing temperature on structure and photoelectrical performance of β-Ga₂O₃/4H-SiC n-n heterojunction photodetectors
Year: 2019
Authors: Yu, J. et al.
Journal: Journal of Alloys and Compounds
Volume: 798, Pages: 458–466
Link: https://doi.org/10.1016/j.jallcom.2019.05.188
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Title: Self-powered photodetectors based on β-Ga₂O₃/4H-SiC p-n heterojunction with ultrahigh current on/off ratio and fast response
Year: 2020
Authors: Yu, J. et al.
Journal: Journal of Alloys and Compounds
Volume: 821, Article: 153532
Link: https://doi.org/10.1016/j.jallcom.2019.153532
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Title: Influence of modulation periods on the evolution of microstructure and mechanical properties of nano-scale HfN/HfB₂ multilayers
Year: 2017
Authors: Yu, J. et al.
Journal: Surface and Coatings Technology
Volume: 326, Pages: 368–374
Link: https://doi.org/10.1016/j.surfcoat.2017.07.074
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Title: Influence of Ag concentration on microstructure, mechanical properties and cytocompatibility of nano-scale Ti-Ag-N/Ag multilayers
Year: 2017
Authors: Yu, J. et al.
Journal: Surface and Coatings Technology
Volume: 312, Pages: 128–133
Link: https://doi.org/10.1016/j.surfcoat.2017.04.004