Jiangang Yu | Microelectronics | Best Innovator Award

Prof. Jiangang Yu | Microelectronics | Best Innovator Award

Prof at North University of China.

Dr. Jiangang Yu is a materials physicist and semiconductor researcher specializing in wide bandgap semiconductor devices, including gallium oxide (Ga₂O₃), silicon carbide (SiC), and III-nitride-based optoelectronic materials. He received his Ph.D. in Microelectronics and Solid-State Electronics from Xidian University in 2020, where his work focused on advanced UV photodetectors and power semiconductor device structures. With a strong physics background and hands-on expertise in device fabrication, he has contributed to multiple national research projects supported by the NSFC and international collaborations. Dr. Yu is first author on several high-impact publications in journals like IEEE Transactions on Electron Devices and Journal of Alloys and Compounds. His innovations have resulted in six granted Chinese patents in UV photodetector technologies. Currently based in Xi’an, he brings deep technical knowledge in physical vapor deposition (PVD), pulsed laser deposition (PLD), and nanostructured multilayers, positioning him as a rising expert in next-generation optoelectronic and power devices.

Profile

Scopus

🎓 Education 

Jiangang Yu earned his Ph.D. in Microelectronics and Solid-State Electronics from Xidian University (2017–2020), working under the supervision of Prof. Renxu Jia. His doctoral research explored high-performance Ga₂O₃-based UV photodetectors and heterojunction power device structures. Prior to this, he completed his M.Sc. in Condensed Matter Physics at Tianjin Normal University (2014–2017), where he gained early research experience in nanolayer films and solid-state physics under Prof. Dejun Li. He holds a B.Sc. in Physics from Jinzhong University (2010–2014), where he built a strong foundation in mathematics, quantum mechanics, and semiconductor physics. This progressive academic path reflects his consistent focus on materials science and device engineering, bridging basic physics with applied microelectronics. Dr. Yu’s educational journey has equipped him with both theoretical understanding and advanced laboratory skills in thin-film deposition, ion beam modification, and optoelectronic device characterization, enabling his transition into cutting-edge semiconductor research and development.

💼Experience 

Dr. Yu has participated in and led several major semiconductor research projects. As principal investigator, he led a Graduate Innovation Project focused on the interface characteristics of Ga₂O₃/SiC heterojunctions (2018–2019). He was a core contributor to three NSFC-funded projects involving Ga₂O₃-based power MOSFETs and heterojunction UV photodetectors (2015–2022). His work has advanced the understanding of epitaxial growth and device integration of wide bandgap semiconductors. He has also conducted detailed investigations into the mechanical behavior of nanostructured boride/nitride multilayers and biofunctional coatings with antibacterial properties. Dr. Yu is adept at using PVD, PLD, ALD, and PECVD techniques for thin-film fabrication and has expertise in semiconductor device processing and optical/electrical characterization. His scientific output includes six first-author publications and six granted patents. His research consistently bridges material science with applied electronics, reflecting a strong ability to conduct independent research while contributing to collaborative multidisciplinary teams across academia and industry.

🏆 Awards & Honors 

Jiangang Yu has authored impactful research in the field of wide bandgap semiconductors, with first-author publications in top journals like IEEE Transactions on Electron Devices and Journal of Alloys and Compounds. His work has introduced several innovations in UV photodetector design, including Pt-enhanced β-Ga₂O₃ heterojunctions and self-powered Ga₂O₃/SiC devices. These contributions have resulted in six granted Chinese invention patents, focusing on dual-band UV photodetectors and MSM structures based on (AlₓGa₁₋ₓ)₂O₃ and (InₓGa₁₋ₓ)₂O₃. His patented technologies address key challenges in spectral selectivity, device sensitivity, and fabrication scalability. Dr. Yu’s expertise in optoelectronic materials and nanostructured films has also supported national-level research in multifunctional coatings. His recognition as a grant recipient and lead investigator in innovation-driven research at Xidian University highlights his potential as an emerging leader in China’s semiconductor materials research landscape. These achievements underscore his technical depth and commitment to advancing power and photonic device engineering.

🔬 Research Focus 

Dr. Yu’s research focuses on the growth, characterization, and device integration of wide bandgap semiconductors, particularly gallium oxide (Ga₂O₃), SiC, and III-nitride materials. He is advancing high-performance UV photodetectors by exploring heterojunctions, surface plasmon-enhanced interfaces, and MSM architectures. His work combines materials synthesis with device-level engineering, enabling novel self-powered and enhancement-mode devices. He also investigates multilayer functional films (e.g., HfN/HfB₂, Ti-Ag-N) with tailored mechanical and antibacterial properties for biomedical and protective applications. Technically, he is proficient in a wide range of deposition and processing techniques including PVD, ALD, and PLD. His goal is to improve the efficiency, durability, and spectral range of optoelectronic devices while contributing to next-generation power electronics such as wide bandgap MOSFETs and IGBTs. Dr. Yu’s research has important implications for high-temperature electronics, ultraviolet imaging, and medical materials, and positions him at the intersection of nanotechnology, materials physics, and solid-state device innovation.

 Conclusion

Dr. Jiangang Yu is an excellent candidate for the Best Innovator Award, with a strong foundation in advanced semiconductor research, a robust publication and patent record, and a demonstrated ability to innovate within the academic and technological landscape. His work on high-performance UV photodetectors and wide bandgap semiconductors is both scientifically significant and industrially relevant. With further emphasis on commercialization pathways and global innovation leadership, he has the potential to emerge as a leading figure in semiconductor innovation.

📝Publications 

  1. Title: Surface modification of β-Ga₂O₃ layer using Pt nanoparticles for improved deep UV photodetector performance
    Year: 2021
    Authors: Yu, J. et al.
    Journal: Journal of Alloys and Compounds
    Volume: 875, Article: 159508
    Link: https://doi.org/10.1016/j.jallcom.2021.159508

  1. Title: Improved Photo-Response Performance of Self-Powered β-Ga₂O₃/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles
    Year: 2020
    Authors: Yu, J. et al.
    Journal: IEEE Transactions on Electron Devices
    Volume/Issue: 67(8), Pages: 3199–3204
    Link: https://doi.org/10.1109/TED.2020.2999183

  2. Title: Influence of annealing temperature on structure and photoelectrical performance of β-Ga₂O₃/4H-SiC n-n heterojunction photodetectors
    Year: 2019
    Authors: Yu, J. et al.
    Journal: Journal of Alloys and Compounds
    Volume: 798, Pages: 458–466
    Link: https://doi.org/10.1016/j.jallcom.2019.05.188

  1. Title: Self-powered photodetectors based on β-Ga₂O₃/4H-SiC p-n heterojunction with ultrahigh current on/off ratio and fast response
    Year: 2020
    Authors: Yu, J. et al.
    Journal: Journal of Alloys and Compounds
    Volume: 821, Article: 153532
    Link: https://doi.org/10.1016/j.jallcom.2019.153532

  1. Title: Influence of modulation periods on the evolution of microstructure and mechanical properties of nano-scale HfN/HfB₂ multilayers
    Year: 2017
    Authors: Yu, J. et al.
    Journal: Surface and Coatings Technology
    Volume: 326, Pages: 368–374
    Link: https://doi.org/10.1016/j.surfcoat.2017.07.074

  1. Title: Influence of Ag concentration on microstructure, mechanical properties and cytocompatibility of nano-scale Ti-Ag-N/Ag multilayers
    Year: 2017
    Authors: Yu, J. et al.
    Journal: Surface and Coatings Technology
    Volume: 312, Pages: 128–133
    Link: https://doi.org/10.1016/j.surfcoat.2017.04.004

Hemanth Kumar Cheemalamarri | Microelectronics | Young Scientist Award

Dr. Hemanth Kumar Cheemalamarri | Microelectronics | Young Scientist Award

Scientist, Institute of Microelectronics, A*STAR Singapore.

Hemanth Kumar Cheemalamarri is an accomplished research scientist with expertise in semiconductor device physics and technology. Currently serving as a Scientist at the Institute of Microelectronics (IME), A*STAR, Singapore, Hemanth specializes in low thermal budget bonding technologies, process integration strategies for 3D ICs, and MEMS packaging. His work focuses on advancing bonding processes such as hybrid bonding, fusion bonding, and eutectic bonding. With extensive experience in semiconductor processing and material characterizations, he is dedicated to innovating processes for industrial adaptability. 🌍🔬

Publication Profile

Google Scholar

Education:

Hemanth completed his Ph.D. in Electrical Engineering from the Indian Institute of Technology Hyderabad (IITH) in 2021, where his thesis focused on low thermal budget bonding for quartz resonators and inter-die cooling applications. He also holds a B.Tech in Electronics & Communication Engineering from Jawaharlal Nehru Technological University Anantapur, with a strong academic background in digital modulation schemes. 📚🎓

Experience:

Hemanth’s current role as a Scientist at IME-A*STAR involves technology development, project execution, and process innovations across a variety of semiconductor fabrication techniques. He has led projects in bonding process development for MEMS applications, developed novel etching processes, and pioneered technologies such as Cu/Dielectric bonding for C2W applications. He has contributed to industrial projects and is a principal investigator for the UIBR grant. 🛠️🔧

Awards and Honors:

Hemanth has received numerous awards, including the GEM award for his exceptional contributions at IME, Visvesvaraya Fellow recognition for his doctoral studies, and the Best Poster Award at the 19th International Workshop on Physics of Semiconductor Devices (IWPSD). He has been honored with multiple research excellence awards at IIT Hyderabad and has received prestigious travel grants for international conferences. 🏅🏆

Research Focus:

Hemanth’s research is primarily focused on low thermal budget bonding technologies and process integration for 3D ICs. He has developed advanced techniques in hybrid bonding, fine-pitch bonding, and wafer-to-wafer (W2W) integration. His work has contributed to enhancing manufacturing efficiency in the semiconductor industry, particularly for MEMS applications and 3D device stacking. 🧠💡

Conclusion:

Hemanth Kumar Cheemalamarri’s interdisciplinary expertise, research contributions, and leadership in semiconductor technology have made him a valuable asset in advancing cutting-edge bonding processes. With a strong commitment to research excellence and industrial application, Hemanth continues to drive innovation in the field of microelectronics. 🔍🚀

Publications:

Damascene-compatible low thermal budget fine-pitch copper hybrid bonding with ultra-thin surface passivation
Published in SSDM 2023
Cited by: 12
Link to publication

Low thermal budget oxide-oxide bonding with thin dielectric interlayer
Published in EPTC 2023
Cited by: 15
Link to publication

FEM Study of Cu Pad Expansion with Surrounded Dielectrics for Hybrid Bonding
Published in EPTC 2023
Cited by: 10
Link to publication

Fine Pitch Al-Al Bonding at CMOS Compatible Thermal Budget
Published in ECTC 2023
Cited by: 20
Link to publication

Through Silicon Via Oxide Etch Back for Via-last Integration Scheme
Published in EPTC 2022
Cited by: 8
Link to publication