Dr. François Grandpierron | Electronics | Best Researcher Award
Featured Publications
Hammou, L. B., Grandpierron, F., Carneiro, E., Ziouche, K., Okada, E., Medjdoub, F., & Patriarche, G. (2025). Effect of high temperature RF stress on the trapping behavior of carbon doped AlN/GaN/AlGaN HEMTs. In 2025 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8). Monterey, CA, USA.
Grandpierron, F., Carneiro, E., Ben-Hammou, L., Moon, J.-S., & Medjdoub, F. (2024). Understanding and quantifying the benefit of graded aluminum gallium nitride channel high-electron mobility transistors. Micromachines, 15(11), 1356.
Shanbhag, A., Grandpierron, F., Harrouche, K., & Medjdoub, F. (2023). Physical insights of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs. Applied Physics Letters, 123(4), 142102.
Harrouche, K., Venkatachalam, S., Ben-Hammou, L., Grandpierron, F., Okada, E., & Medjdoub, F. (2023). Low trapping effects and high electron confinement in short AlN/GaN-on-SiC HEMTs by means of a thin AlGaN back barrier. Micromachines, 14, 291.