François Grandpierron | Electronics | Best Researcher Award

Dr. François Grandpierron | Electronics | Best Researcher Award

Institut d’Electronique de Microélectronique et de Nanotechnologie | France

Dr. François Grandpierron is a device-oriented microelectronics researcher specializing in the design, fabrication, simulation, and electrical characterization of GaN-based transistors for RF and power applications. He is currently a Postdoctoral Researcher at IEMN in Lille, leading process development and TCAD simulations for wide bandgap-based RF and power devices, collaborating closely with cleanroom teams and materials researchers to translate epitaxial advances into scalable device architectures. He earned his PhD in Microelectronics and Nanofabrication from the Graduate School ENGineering and SYstem Sciences in Lille, focusing on the design and fabrication of robust GaN HEMTs for millimeter-wave applications, and also holds a Master’s degree in Chemistry with a specialization in Polymers and Surfaces and a Bachelor’s degree in Chemistry from the University of Rouen Normandy. François has extensive hands-on experience with cleanroom processes including electron beam lithography, photolithography, vacuum deposition, plasma and wet etching, reactive ion etching, rapid thermal annealing, and advanced morphological and electrical characterization techniques. He has contributed to European and national projects addressing high-frequency GaN electronics for radar and space applications and has published in high-impact journals while presenting at international conferences, highlighting innovations in buffer engineering, low-trapping effects, and high-electron confinement. His research has been cited by 42 documents with five publications and an h-index of 3. Fluent in French and English, he is proficient with software such as SILVACO, ADS, IC-CAP, and Origin, and maintains active collaborations bridging academia and industry. Outside research, he enjoys running, swimming, biking, kayaking, and exploring diverse cultures across Europe, South America, Africa, and Asia, reflecting a dynamic and globally engaged perspective.

Featured Publications

Hammou, L. B., Grandpierron, F., Carneiro, E., Ziouche, K., Okada, E., Medjdoub, F., & Patriarche, G. (2025). Effect of high temperature RF stress on the trapping behavior of carbon doped AlN/GaN/AlGaN HEMTs. In 2025 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8). Monterey, CA, USA.

Grandpierron, F., Carneiro, E., Ben-Hammou, L., Moon, J.-S., & Medjdoub, F. (2024). Understanding and quantifying the benefit of graded aluminum gallium nitride channel high-electron mobility transistors. Micromachines, 15(11), 1356.

Shanbhag, A., Grandpierron, F., Harrouche, K., & Medjdoub, F. (2023). Physical insights of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs. Applied Physics Letters, 123(4), 142102.

Harrouche, K., Venkatachalam, S., Ben-Hammou, L., Grandpierron, F., Okada, E., & Medjdoub, F. (2023). Low trapping effects and high electron confinement in short AlN/GaN-on-SiC HEMTs by means of a thin AlGaN back barrier. Micromachines, 14, 291.