François Grandpierron | Electronics | Best Researcher Award

Dr. François Grandpierron | Electronics | Best Researcher Award

Institut d’Electronique de Microélectronique et de Nanotechnologie | France

Dr. François Grandpierron is a device-oriented microelectronics researcher specializing in the design, fabrication, simulation, and electrical characterization of GaN-based transistors for RF and power applications. He is currently a Postdoctoral Researcher at IEMN in Lille, leading process development and TCAD simulations for wide bandgap-based RF and power devices, collaborating closely with cleanroom teams and materials researchers to translate epitaxial advances into scalable device architectures. He earned his PhD in Microelectronics and Nanofabrication from the Graduate School ENGineering and SYstem Sciences in Lille, focusing on the design and fabrication of robust GaN HEMTs for millimeter-wave applications, and also holds a Master’s degree in Chemistry with a specialization in Polymers and Surfaces and a Bachelor’s degree in Chemistry from the University of Rouen Normandy. François has extensive hands-on experience with cleanroom processes including electron beam lithography, photolithography, vacuum deposition, plasma and wet etching, reactive ion etching, rapid thermal annealing, and advanced morphological and electrical characterization techniques. He has contributed to European and national projects addressing high-frequency GaN electronics for radar and space applications and has published in high-impact journals while presenting at international conferences, highlighting innovations in buffer engineering, low-trapping effects, and high-electron confinement. His research has been cited by 42 documents with five publications and an h-index of 3. Fluent in French and English, he is proficient with software such as SILVACO, ADS, IC-CAP, and Origin, and maintains active collaborations bridging academia and industry. Outside research, he enjoys running, swimming, biking, kayaking, and exploring diverse cultures across Europe, South America, Africa, and Asia, reflecting a dynamic and globally engaged perspective.

Featured Publications

Hammou, L. B., Grandpierron, F., Carneiro, E., Ziouche, K., Okada, E., Medjdoub, F., & Patriarche, G. (2025). Effect of high temperature RF stress on the trapping behavior of carbon doped AlN/GaN/AlGaN HEMTs. In 2025 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8). Monterey, CA, USA.

Grandpierron, F., Carneiro, E., Ben-Hammou, L., Moon, J.-S., & Medjdoub, F. (2024). Understanding and quantifying the benefit of graded aluminum gallium nitride channel high-electron mobility transistors. Micromachines, 15(11), 1356.

Shanbhag, A., Grandpierron, F., Harrouche, K., & Medjdoub, F. (2023). Physical insights of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs. Applied Physics Letters, 123(4), 142102.

Harrouche, K., Venkatachalam, S., Ben-Hammou, L., Grandpierron, F., Okada, E., & Medjdoub, F. (2023). Low trapping effects and high electron confinement in short AlN/GaN-on-SiC HEMTs by means of a thin AlGaN back barrier. Micromachines, 14, 291.

Yosef Wubet | Electrical Engineering | Best Researcher Award

Mr. Yosef Wubet | Electrical Engineering | Best Researcher Award

University of Gondar Institute of Technology | Ethiopia

Mr. Yosef Birara Wubet is a distinguished lecturer and researcher in the Electrical and Computer Engineering Department at the University of Gondar Institute of Technology, Ethiopia. He earned a Master of Science in Power System Engineering and a Bachelor of Science in Electrical Engineering, specializing in Electrical Power and Control Engineering from Bahir Dar University, demonstrating exceptional academic performance. Yosef’s research focuses on the application of machine learning for transient stability assessment, fault detection and classification, power system stability and reliability, renewable energy integration, solar power design, smart grid systems, and controller modeling and design. He has led and contributed to multiple innovative projects, including the development of a hybrid solar and wind energy system with battery storage using artificial neural networks for optimal energy scheduling, and enhancing hydropower plant transient stability through FACTS devices controlled by machine learning tools. Yosef has also developed fault detection models using convolutional neural networks and solar-powered smart robotic systems, showcasing his expertise in integrating advanced computational techniques with practical engineering solutions. Yosef combines teaching, research supervision, and project management, mentoring undergraduate students and guiding team-based research projects. He possesses strong proficiency in engineering software such as MATLAB, PSpice, Dig Silent, Homer Pro, Python, AutoCAD, ETAP, LTspice, and Multisim, alongside excellent communication, leadership, and problem-solving skills. Fluent in Amharic and English, Yosef holds professional licenses for electrical installation and maintenance of grid-connected and off-grid solar power systems. He has been recognized for his outstanding academic projects and professional contributions, earning awards for excellence in engineering design and research. Beyond his professional pursuits, he enjoys reading scholarly articles, engaging in sports and bodybuilding, listening to music, and contributing to community initiatives. Through his expertise in power systems, renewable energy, and smart grid technologies, Yosef Birara Wubet continues to advance sustainable energy solutions and innovative research in electrical engineering.

Featured Publications

  • Wubet, Y. B., Getahun, H. M., Alemu, Y. A., & Gela, T. T. (2025). Transient stability assessment and enhancement of hydropower plant using artificial neural network. Scientific African, e02970.

  • Wubet, Y. B., Gela, T. T., & Getahun, H. M. (2025). Design and modeling of ANN based automatic generation control and automatic voltage regulator for two integrated hydro power plants in Ethiopia. Scientific African, e02958.