Assoc. Prof. Dr Bilge Imer, METU, Turkey
Assoc. Prof. Dr. Bilge Imer is an accomplished scientist and entrepreneur with expertise in electronic materials, thin films, and coatings. She earned her Ph.D. in Electronic Materials from the University of California, Santa Barbara, and holds an M.A. in Business Economics. Dr. Imer is the founder and CEO of ATOMICOAT Inc., specializing in semiconductor thin film growth equipment. She is an Associate Professor at METU, where she has led impactful research and development projects. With several patents in materials science and a strong background in R&D, Dr. Imer has significantly contributed to industrial advancements. 🌐📈🔬💡
Publication Profile
google scholar
Education
Assoc. Prof. Dr. Bilge Imer holds a Ph.D. in Electronic Materials from the University of California, Santa Barbara (2000-2006), where she also earned an M.A. in Business Economics and completed a Technology Management Program, focusing on new product development and venture creation. She obtained her B.S. in Materials Science and Engineering from the University of Pittsburgh (1996-2000). Her interdisciplinary academic background combines expertise in material science, business economics, and technology management, which shapes her research and teaching in the fields of innovation and entrepreneurship. 🎓💡📚👩🏫🔬
Experience
Assoc. Prof. Dr. Bilge Imer is the Founder & CEO of ATOMICOAT Inc., where she raised seed funding and developed innovative semiconductor thin film growth equipment. She is also an Associate Professor at METU, specializing in Metallurgical and Materials Engineering. Dr. Imer has led impactful research, including turbine blade materials for Istanbul’s Ambarlı plant, and managed a 5 million EUR TUBITAK project. She established advanced research labs and advised corporate companies on coatings and alloys. Holding two patents, she has authored 18 papers with over 1000 citations. Additionally, she has coordinated industry partnerships and supported student entrepreneurship. 🏢🔬💡🎓
Research Impact
Dr. Imer’s work has made significant contributions to material science and advanced semiconductor technology. His influential publications in top-tier journals, such as Applied Physics Letters and Journal of Crystal Growth, showcase his expertise and innovative research. In addition to his published articles, Dr. Imer holds multiple patents, further solidifying his impact in the field. His dedication to advancing material science is evident in his continuous pursuit of groundbreaking discoveries, shaping the future of semiconductor technology. 🌟🔬📚💡👨🔬
Additional Recognition
With numerous technical skills, business development expertise, and a strong commitment to community involvement, he is a well-rounded, influential researcher and leader. His work extends beyond academia, with significant contributions to TV and radio, where he engages with broader audiences and fosters impactful discussions. His diverse background in both technical and business sectors allows him to bridge the gap between innovation and practical application, enhancing his research’s relevance. As a leader, he mentors emerging professionals and drives initiatives that create lasting societal impact. 📡📈🎙️💡👥
Research Focus
Assoc. Prof. Dr. Bilge Imer’s research primarily focuses on the growth and microstructural evolution of gallium nitride (GaN) films, particularly non-polar and semi-polar III-Nitrides. She has contributed significantly to improving GaN quality through metalorganic chemical vapor deposition (MOCVD) and sidewall lateral epitaxial overgrowth (SLEO) techniques. Her work addresses defect reduction, polarization anisotropy, and the stability of m-plane GaN films. Dr. Imer’s research aims to enhance the performance and material properties of GaN for electronic and optoelectronic applications. Her work is instrumental in advancing the understanding of GaN growth on different substrates. 🔬✨🌱
Publication Top Notes
Growth of planar non-polar {1-1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
Improved quality (112 0) a-plane GaN with sidewall lateral epitaxial overgrowth
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)
Stability of (1100) m-plane GaN films grown by metalorganic chemical vapor deposition
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire